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16GB DDR4 3200MTS ECC SODIMM MICRON
- 8 bit pre-fetch
- Write CRC is supported at all speed grades
- Functionality and operations comply with the DDR4 SDRAM datasheet
- 16 internal banks
- Bi-Directional Differential Data Strobe
- Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
- Temperature sensor with integrated SPD
- This product is in compliance with the RoHS directive
- Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available
- Supports ECC error correction and detection
- On-Die Termination (ODT)
- Per DRAM Addressability is supported
- CA parity (Command/Address Parity) mode is supported
- Internal Vref DQ level generation is available
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Overview
Kingston Technology KSM32SES8/16MF, 16 GB, 1 x 16 GB, DDR4, 260-pin SO-DIMM
Specifications
Features
- Row active time
- 32 ns ns
- Internal memory
- 16 GB GB
- Memory layout (modules x size)
- 1 x 16 GB GB
- Memory data transfer rate
- 3200 MT/s MT/s
- Component for
- Laptop
- CAS latency
- 22
- Buffered memory type
- Unregistered (unbuffered)
- Memory ranking
- 1
- Memory voltage
- 1.2 V V
- Module configuration
- 2048M x 72
- Row cycle time
- 45.75 ns ns
- Refresh row cycle time
- 350 ns ns
- SPD profile
- Yes
- Programming power voltage (VPP)
- 2.5 V V
- Internal memory type
- DDR4
- Lead plating
- Gold
- JEDEC standard
- Yes
- Memory form factor
- 260-pin SO-DIMM
- ECC
- Yes
Sustainability
- Compliance certificates
- RoHS
Weight & dimensions
- Height
- 30 mm mm
- Width
- 69.6 mm mm
- Depth
- 3.7 mm mm
Other features
- Doesn't contain
- Halogen
Logistics data
- Harmonized System (HS) code
- 84733020
Operational conditions
- Operating temperature (T-T)
- 0 - 85 °C °C
- Storage temperature (T-T)
- -55 - 100 °C °C