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8GB 3200MT/s DDR4 ECC CL22 DIMM 1Rx8 Hyn
- Power Supply: VDD = 1.2V Typical
- VDDSPD = 2.2V to 3.6V
- Data bus inversion (DBI) for data bus
- On-die VREFDQ generation and calibration
- Single-rank
- Temperature sensor with integrated SPD
- 16 internal banks; 4 groups of 4 banks each
- Terminated control command and address bus
- VDDQ = 1.2V Typical
- VPP = 2.5V Typical
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Low-power auto self refresh (LPASR)
- On-board I2 serial presence-detect (SPD) EEPROM
- Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
- Selectable BC4 or BL8 on-the-fly (OTF)
- Fly-by topology
- PCB: Height 1.23” (31.25mm)
- RoHS Compliant and Halogen-Free
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Overview
Kingston Technology KSM32ES8/8HE, 8 GB, 1 x 8 GB, DDR4, 288-pin DIMM
Specifications
Features
- Internal memory
- 8 GB GB
- Memory layout (modules x size)
- 1 x 8 GB GB
- Internal memory type
- DDR4
- Memory data transfer rate
- 3200 MT/s MT/s
- Component for
- Server
- Memory form factor
- 288-pin DIMM
- ECC
- Yes
- CAS latency
- 22
- Buffered memory type
- Unregistered (unbuffered)
- Memory ranking
- 1
- Memory voltage
- 1.2 V V
- Row active time
- 32 ns ns
- SPD profile
- Yes
- Programming power voltage (VPP)
- 2.5 V V
- JEDEC standard
- Yes
- Module configuration
- 1024M x 72
- Row cycle time
- 45.75 ns ns
Operational conditions
- Operating temperature (T-T)
- 0 - 85 °C °C
- Storage temperature (T-T)
- -55 - 100 °C °C
Sustainability
- Compliance certificates
- RoHS
Weight & dimensions
- Width
- 133.3 mm mm
- Height
- 31.2 mm mm